Share Email Print
cover

Proceedings Paper

Defects in amorphous silicon carbide and their relation to solar cell device performance
Author(s): Brian J. Simonds; Feng Zhu; Jian Hu; Arun Madan; P. Craig Taylor
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Amorphous silicon carbide alloys are being investigated as a possible top photovoltaic layer in photoelectochemical (PEC) cells used for water splitting. In order to be used as such, it is important that the effect that varying carbon concentration has on bonding, and thus the electronic and optical properties, is well understood. The samples being studied are silicon rich films with between 6 and 11 atomic percent of carbon. Electron spin resonance (ESR) experiments, including light-induced ESR (LESR), were performed to study defects from dangling bonds which occur dominantly at the silicon atoms in these films. Spin densities resulting from silicon dangling bonds varied between 1016 and 1017 spins/cm3. Lastly, to test the validity of these materials being used for devices we prepared pin structured solar cells with the films being studied used as the absorber layer.

Paper Details

Date Published: 20 August 2009
PDF: 7 pages
Proc. SPIE 7409, Thin Film Solar Technology, 740912 (20 August 2009); doi: 10.1117/12.826451
Show Author Affiliations
Brian J. Simonds, Colorado School of Mines (United States)
Feng Zhu, MVSystems, Inc. (United States)
Jian Hu, MVSystems, Inc. (United States)
Arun Madan, Colorado School of Mines (United States)
MVSystems, Inc. (United States)
P. Craig Taylor, Colorado School of Mines (United States)


Published in SPIE Proceedings Vol. 7409:
Thin Film Solar Technology
Alan E. Delahoy; Louay A. Eldada, Editor(s)

© SPIE. Terms of Use
Back to Top