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Proceedings Paper

Modeling of GaN/AlN heterostructure-based nano pressure sensors
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Paper Abstract

We quantify the influence of thermopiezoelectric effects in nano-sized AlxGa1-xN/GaN heterostructures for pressure sensor applications based on the barrier height modulation principle. We use a fully coupled thermoelectromechanical formulation, consisting of balance equations for heat transfer, electrostatics and mechanical field. To estimate the vertical transport current in the heterostructures, we have developed a multi-physics model incorporating thermionic emission, thermionic field emission, and tunneling as the current transport mechanisms. A wide range of thermal (0-300 K) and pressure (0-10 GPa) loadings has been considered. The results for the thermopiezoelectric modulation of the barrier height in these heterostructures have been obtained and optimized. The calculated current shows a linear decrease with increasing pressure. The linearity in pressure response suggests that AlxGa1-xN/GaN heterostructure-based devices are promising candidates for pressure sensor applications under severe environmental conditions.

Paper Details

Date Published: 21 August 2009
PDF: 8 pages
Proc. SPIE 7402, Nanoengineering: Fabrication, Properties, Optics, and Devices VI, 74020C (21 August 2009); doi: 10.1117/12.826267
Show Author Affiliations
S. Patil, Wilfrid Laurier Univ. (Canada)
N. Sinha, Massachusetts Institute of Technology (United States)
R. V. N. Melnik, Wilfrid Laurier Univ. (Canada)


Published in SPIE Proceedings Vol. 7402:
Nanoengineering: Fabrication, Properties, Optics, and Devices VI
Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

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