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Proceedings Paper

Transport and structural characterization of solution-processable doped ZnO nanowires
Author(s): Rodrigo Noriega; Ludwig Goris; Jonathan Rivnay; Jonathan Scholl; Linda M. Thompson; Aaron C. Palke; Jonathan F. Stebbins; Alberto Salleo
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Paper Abstract

The use of ZnO nanowires has become a widespread topic of interest in optoelectronics. In order to correctly assess the quality, functionality, and possible applications of such nanostructures it is important to accurately understand their electrical and optical properties. Aluminum- and gallium-doped crystalline ZnO nanowires were synthesized using a low-temperature solution-based process, achieving dopant densities of the order of 1020 cm-3. A non-contact optical technique, photothermal deflection spectroscopy, is used to characterize ensembles of ZnO nanowires. By modeling the free charge carrier absorption as a Drude metal, we are able to calculate the free carrier density and mobility. Determining the location of the dopant atoms in the ZnO lattice is important to determine the doping mechanisms of the ZnO nanowires. Solid-state NMR is used to distinguish between coordination environments of the dopant atoms.

Paper Details

Date Published: 20 August 2009
PDF: 6 pages
Proc. SPIE 7411, Nanoscale Photonic and Cell Technologies for Photovoltaics II, 74110N (20 August 2009); doi: 10.1117/12.826204
Show Author Affiliations
Rodrigo Noriega, Stanford Univ. (United States)
Ludwig Goris, Stanford Univ. (United States)
Jonathan Rivnay, Stanford Univ. (United States)
Jonathan Scholl, Stanford Univ. (United States)
Linda M. Thompson, Stanford Univ. (United States)
Aaron C. Palke, Stanford Univ. (United States)
Jonathan F. Stebbins, Stanford Univ. (United States)
Alberto Salleo, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 7411:
Nanoscale Photonic and Cell Technologies for Photovoltaics II
Loucas Tsakalakos, Editor(s)

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