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Proceedings Paper

Measurement of thickness of native silicon dioxide with a scanning electron microscope
Author(s): V. P. Gavrilenko; Yu. A. Novikov; A. V. Rakov; P. A. Todua
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Paper Abstract

We are describing a method of measuring thickness of a native silicon dioxide film using a scanning electron microscope. The method consists of etch removal of native silicon dioxide from the surface of trenches in silicon with a right-angled profile, with a subsequent measurement of an increase in trench width. The thickness of a native silicon dioxide film measured with the help of this method turned out to be 2.39 ± 0.12 nm.

Paper Details

Date Published: 21 August 2009
PDF: 8 pages
Proc. SPIE 7405, Instrumentation, Metrology, and Standards for Nanomanufacturing III, 740507 (21 August 2009); doi: 10.1117/12.826190
Show Author Affiliations
V. P. Gavrilenko, Ctr. for Surface and Vacuum Research (Russian Federation)
Yu. A. Novikov, A. M. Prokhorov General Physics Institute (Russian Federation)
A. V. Rakov, A. M. Prokhorov General Physics Institute (Russian Federation)
P. A. Todua, Ctr. for Surface and Vacuum Research (Russian Federation)


Published in SPIE Proceedings Vol. 7405:
Instrumentation, Metrology, and Standards for Nanomanufacturing III
Michael T. Postek; John A. Allgair, Editor(s)

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