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Proceedings Paper

Grating-gate tunable plasmon absorption in InP and GaN based HEMTs
Author(s): R. E. Peale; H. Saxena; W. R. Buchwald; G. Aizin; A. V. Muravjov; D. B. Veksler; N. Pala; X. Hu; R. Gaska; M. S. Shur
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Paper Abstract

Gate-voltage tunable plasmon resonances in the two dimensional electron gas of high electron mobility transistors (HEMT) fabricated from the InGaAs/InP and AlGaN/GaN materials systems are reported. Gates were in the form of a grating to couple normally incident THz radiation into 2D plasmons. Narrow-band resonant absorption of THz radiation was observed in transmission for both systems in the frequency range 10 - 100 cm-1. The fundamental and harmonic resonances shift toward lower frequencies with negative gate bias. Calculated spectra based on the theory developed for MOSFETs by Schaich, Zheng, and McDonald (1990) agree well with the GaN results, but significant differences for the InGaAs/InP device suggest that modification of the theory may be required for HEMTs in some circumstances.

Paper Details

Date Published: 9 September 2009
PDF: 8 pages
Proc. SPIE 7467, Nanophotonics and Macrophotonics for Space Environments III, 74670Q (9 September 2009); doi: 10.1117/12.826187
Show Author Affiliations
R. E. Peale, Univ. of Central Florida (United States)
H. Saxena, Univ. of Central Florida (United States)
W. R. Buchwald, Air Force Research Lab. (United States)
G. Aizin, Kingsborough College (United States)
A. V. Muravjov, Rensselaer Polytechnic Institute (United States)
Institute for Physics of Microstructures (Russian Federation)
D. B. Veksler, Rensselaer Polytechnic Institute (United States)
N. Pala, Florida International Univ. (United States)
X. Hu, Sensor Electronic Technology, Inc. (United States)
R. Gaska, Sensor Electronic Technology, Inc. (United States)
M. S. Shur, Rensselaer Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 7467:
Nanophotonics and Macrophotonics for Space Environments III
Edward W. Taylor; David A. Cardimona, Editor(s)

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