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Proceedings Paper

Theoretical study on InxGa1-xN/Si hetero-junction solar cells
Author(s): Jiangong Li; Fubin Li; Shuo Lin; Shuiku Zhong; Yiming Wei; Xianghai Meng; Xiaoming Shen
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Paper Abstract

In this paper, we designed series of InxGa1-xN/Si hetero-junction solar cells. Key properties of InxGa1-xN/Si solar cells (single junction, double junctions) are simulated by using AMPS-1D software, including I-V characteristic, conversion efficiency, band structure etc. The InxGa1-xN/Si hetero-junction solar cells are compared with the performances of Si homo-junction solar cells. We also discuss some sensitive performance-related parameters in the preparation of InGaN/Si hetero-junction solar cells.

Paper Details

Date Published: 20 August 2009
PDF: 9 pages
Proc. SPIE 7409, Thin Film Solar Technology, 740910 (20 August 2009); doi: 10.1117/12.826088
Show Author Affiliations
Jiangong Li, Guangxi Univ. (China)
Fubin Li, Guangxi Univ. (China)
Shuo Lin, Guangxi Univ. (China)
Shuiku Zhong, Guangxi Univ. (China)
Yiming Wei, Guangxi Univ. (China)
Xianghai Meng, Guangxi Univ. (China)
Xiaoming Shen, Guangxi Univ. (China)

Published in SPIE Proceedings Vol. 7409:
Thin Film Solar Technology
Alan E. Delahoy; Louay A. Eldada, Editor(s)

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