Proceedings Paper
Optical properties and material studies of InGaN/GaN multi-quantum well light emitting diode wafers with different structures| Format | Member Price | Non-Member Price |
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Paper Abstract
Three blue emission multi-quantum well (MQW) light emitting diode (LED) samples with different indium
composition and different amount of quantum wells were studied. From x-ray diffraction and transmission electron
microscopy experimental measurements, the period thickness and indium composition of the sample have been
obtained. The temperature dependent photoluminescence (PL) shows that the signal from InGaN/GaN samples was
influenced by two kinds of factors. One is the band to band transition of InGaN; another is the localization effect
caused by the non-uniformity of the In composition in In-rich samples. While the temperature increases, full width
half maximum becomes larger, and the signal tends to shift to the red side. Through theoretical fitting on the
temperature dependent PL data, the activation energies (Ea) of the InGaN multi-quantum well samples were
obtained. Time-resolved photoluminescence (TRPL) results show that as the indium composition increases and the
QW number increases, a longer decay time will get. From the results of photoluminescence excitation (PLE)
experiment, a large Stokes shift (SS) was observed. The large Stokes shift can be attributed to the variation of
indium composition or the quantum confined Stark effect (QCSE). Also, the Photoluminescence spectra exhibit
weak blue peaks and the optical intensity is improved by increasing the number of wells.
Paper Details
Date Published: 18 August 2009
PDF: 13 pages
Proc. SPIE 7422, Ninth International Conference on Solid State Lighting, 74220Q (18 August 2009); doi: 10.1117/12.825895
Published in SPIE Proceedings Vol. 7422:
Ninth International Conference on Solid State Lighting
Ian T. Ferguson; Christoph Hoelen; Jianzhong Jiao; Tsunemasa Taguchi, Editor(s)
PDF: 13 pages
Proc. SPIE 7422, Ninth International Conference on Solid State Lighting, 74220Q (18 August 2009); doi: 10.1117/12.825895
Show Author Affiliations
T. W. Kuo, National Taiwan Univ. (Taiwan)
T. Y. Lin, National Taiwan Univ. (Taiwan)
Z. C. Feng, National Taiwan Univ. (Taiwan)
W. Liu, Institute of Materials Research and Engineering (Singapore)
S. J. Chua, Institute of Materials Research and Engineering (Singapore)
T. Y. Lin, National Taiwan Univ. (Taiwan)
Z. C. Feng, National Taiwan Univ. (Taiwan)
W. Liu, Institute of Materials Research and Engineering (Singapore)
S. J. Chua, Institute of Materials Research and Engineering (Singapore)
H. L. Tsai, National Taiwan Univ. (Taiwan)
J. R. Yang, National Taiwan Univ. (Taiwan)
Y. S. Huang, National Taiwan Univ. of Science and Technology (Taiwan)
Ian T. Ferguson, Georgia Institute of Technology (United States)
W. Lu, Fisk Univ. (United States)
J. R. Yang, National Taiwan Univ. (Taiwan)
Y. S. Huang, National Taiwan Univ. of Science and Technology (Taiwan)
Ian T. Ferguson, Georgia Institute of Technology (United States)
W. Lu, Fisk Univ. (United States)
Published in SPIE Proceedings Vol. 7422:
Ninth International Conference on Solid State Lighting
Ian T. Ferguson; Christoph Hoelen; Jianzhong Jiao; Tsunemasa Taguchi, Editor(s)
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