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Proceedings Paper

Laser-induced structural, electrical, and optical properties evolution of phase change Ge2Sb2Te5 thin films
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Paper Abstract

Sheet resistance of laser-irradiated Ge2Sb2Te5 films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance underwent an abrupt change of four orders of magnitude (107→103 Ω/sq) at about 580mW , x-ray diffraction studies of the three samples before, at and after the abrupt point revealed the phase change process of the Ge2Sb2Te5 thin films from amorphous to crystal states. Optical constants of the three samples were measured by ellipsometry. Based on the experimental results, the relationship between the electrical / optical properties and the structure of the Ge2Sb2Te5 thin films is discussed and it is shown that optical-electrical hybrid data storage may be realized using optical writing and electrical reading.

Paper Details

Date Published: 19 March 2009
PDF: 5 pages
Proc. SPIE 7125, Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage, 71251U (19 March 2009); doi: 10.1117/12.825762
Show Author Affiliations
Huajun Sun, Shanghai Institute of Optics and Fine Mechanics (China)
Lisong Hou, Shanghai Institute of Optics and Fine Mechanics (China)
Yiqun Wu, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 7125:
Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage
Fuxi Gan, Editor(s)

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