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Proceedings Paper

Quasi one-dimensional transport in doped PBTTT and PBTTT thin film transistors
Author(s): Jonathan D. Yuen; Reghu Menon; Nelson E. Coates; Ebinazar B. Namdas; Shinuk Cho; Scott T. Hannahs; Daniel Moses; Alan J. Heeger
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Paper Abstract

Conducting and semiconducting polymers are important materials in the development of printed, flexible, large area electronics such as flat panel displays and photovoltaic cells. There has been rapid progress in developing conjugated polymers with high transport mobility required for high performance field effect transistors (FETs), beginning with mobilities around 10-5cm2/Vs to a recent report of 1cm2/Vs for poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno [3,2-b]thiophene) (PBTTT). In this work, the electrical properties of PBTTT are studied at high charge densities both as the semiconductor layer in FETs and in electrochemically doped films to determine the transport mechanism. We show that data obtained using a wide range of parameters (temperature, gate-induced carrier density, source-drain voltage and doping level) scale onto the universal curve predicted for transport in the Luttinger Liquid description of the onedimensional "metal", where fermions along the 1D chain collectively behave as bosons, and where charge and spin are decoupled.

Paper Details

Date Published: 21 August 2009
PDF: 6 pages
Proc. SPIE 7417, Organic Field-Effect Transistors VIII, 74171A (21 August 2009); doi: 10.1117/12.825695
Show Author Affiliations
Jonathan D. Yuen, Univ. of California, Santa Barbara (United States)
Reghu Menon, Univ. of California, Santa Barbara (United States)
Indian Institute of Science (India)
Nelson E. Coates, Univ. of California, Santa Barbara (United States)
Ebinazar B. Namdas, Univ. of California, Santa Barbara (United States)
Shinuk Cho, Univ. of California, Santa Barbara (United States)
Scott T. Hannahs, Florida State Univ. (United States)
Daniel Moses, Univ. of California, Santa Barbara (United States)
Alan J. Heeger, Indian Institute of Science (India)


Published in SPIE Proceedings Vol. 7417:
Organic Field-Effect Transistors VIII
Zhenan Bao; Iain McCulloch, Editor(s)

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