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Proceedings Paper

Optical properties of the modulation doped InGaAs/InAlAs quantum well
Author(s): Chung-Chih Chang; Ming-Seng Hsu; Yueh Ouyang; Yau-Chyr Wang
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Paper Abstract

Optical responses of a modulation doped lattice-matched InGaAs/InAlAs single quantum well structure grown by gas source molecular beam epitaxy were characterized by photoreflectance PR at various temperatures and depths. Two features corresponding to the ground state transition coming from the SQW and the band gap transition generated from the buffer layer are observed in the PR spectra and agree with those calculated theoretically. The optical transitions were perturbed by the energy shifts of the electronic states due to Stark effect induced by the doped result. The values of the Varshni coefficients of InGaAs/InAlAs were obtained from the relation between the exciton transition energy and the temperature. The built-in electric field could be determined and located from a series of PR spectra by sequential etching processes. The results suggest that a built-in electric field exists at the buffer/substrate interface.

Paper Details

Date Published: 24 August 2009
PDF: 13 pages
Proc. SPIE 7420, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications III, 74200S (24 August 2009); doi: 10.1117/12.825660
Show Author Affiliations
Chung-Chih Chang, R.O.C. Military Academy (Taiwan)
Ming-Seng Hsu, R.O.C. Military Academy (Taiwan)
Yueh Ouyang, R.O.C. Military Academy (Taiwan)
Yau-Chyr Wang, Nan Jeon Institute of Technology (Taiwan)


Published in SPIE Proceedings Vol. 7420:
Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications III
Shizhuo Yin; Ruyan Guo, Editor(s)

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