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Proceedings Paper

Improving radiation tolerance in e2v CCD sensors
Author(s): D. Burt; J. Endicott; P. Jerram; P. Pool; D. Morris; A. Hussain; P. Ezra
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Paper Abstract

e2v have been developing new approaches to mitigate against the effects of radiation damage in CCD sensors. The first of these is our "rad-hard" device technology, primarily developed to reduce the flat-band voltage shift following ionising radiation. With this a very significant improvement has been demonstrated, the flat-band shift reducing from typically 100-200 mV/kRad(Si) with standard devices to only 6 mV/kRad(Si), plus an associated reduction in the increase in surface dark signal. The rad-hard process thereby allows devices to be operated in environments with up to at least 500kRad total dose and/or with reduced shielding. Developments aimed at reducing the impact of proton radiation have included the manufacture of p-channel devices. Our initial data indicates that at -50°C the increase in charge transfer inefficiency is reduced by a factor of two times for parallel transfer and five times for serial transfer.

Paper Details

Date Published: 26 August 2009
PDF: 10 pages
Proc. SPIE 7439, Astronomical and Space Optical Systems, 743902 (26 August 2009); doi: 10.1117/12.825273
Show Author Affiliations
D. Burt, e2v technologies plc (United Kingdom)
J. Endicott, e2v technologies plc (United Kingdom)
P. Jerram, e2v technologies plc (United Kingdom)
P. Pool, e2v technologies plc (United Kingdom)
D. Morris, e2v technologies plc (United Kingdom)
A. Hussain, e2v technologies plc (United Kingdom)
P. Ezra, e2v technologies plc (United Kingdom)


Published in SPIE Proceedings Vol. 7439:
Astronomical and Space Optical Systems
Penny G. Warren; James B. Heaney; Robert K. Tyson; Michael Hart; E. Todd Kvamme; Cheryl J. Marshall, Editor(s)

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