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Proceedings Paper

A crystalline alkylsilane dielectric surface-modification layer: a general strategy for high performance organic thin-film transistors
Author(s): Ajay Virkar; Yutaka Ito; Stefan Mannsfeld; Michael Toney; Zhenan Bao
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Paper Abstract

It has been well established that in organic thin film transistors (OTFTs), charge transport occurs within the first few monolayers of the semiconductor at the semiconductor/dielectric interface. Understanding and engineering the semiconductor-dielectric is therefore critical. Large discrepancies in performance, even with seemingly identical surface treatments, indicate that additional surface parameters must be identified and controlled in order to optimize OTFTs. Here, we used the Langmuir-Blodgett technique to study the effect of an octadecylsilane dielectric modification layer on OTFT performance. We found a crystalline, dense OTS monolayer promotes two-dimensional growth in a variety of organic semiconductors. Mobilities as high as 5.3 cm2/Vs and 2.2 cm2/Vs were demonstrated on crystalline OTS for C60 and pentacene, respectively. Finally, we also developed a simple, scalable spin-coating method to produce crystalline OTS. This work represents a significant step towards a general approach for morphological control of organic semiconductors which is directly linked to their thin film transistor performance.

Paper Details

Date Published: 28 August 2009
PDF: 16 pages
Proc. SPIE 7417, Organic Field-Effect Transistors VIII, 74170I (28 August 2009); doi: 10.1117/12.825034
Show Author Affiliations
Ajay Virkar, Stanford Univ. (United States)
Yutaka Ito, Toppan Printing Co., Ltd. (Japan)
Stefan Mannsfeld, Stanford Linear Accelerator Ctr. (United States)
Michael Toney, Stanford Linear Accelerator Ctr. (United States)
Zhenan Bao, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 7417:
Organic Field-Effect Transistors VIII
Zhenan Bao; Iain McCulloch, Editor(s)

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