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Proceedings Paper

TiO2-based photosensitive oxide semiconductors for solar hydrogen
Author(s): Janusz Nowotny; Tadeusz Bak
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Paper Abstract

Titanium dioxide is a promising candidate for high-performance photocatalysts. Defect engineering may be applied for the modification of its properties, including the functional-related properties, in a controlled manner in order to achieve the desired/optimized performance. The present work reports the application of defect engineering for the modification of semiconducting properties of undoped TiO2. The defect disorder is considered in terms of the predominant defect reactions. The related equilibrium constants are used to derive the defect disorder diagram for undoped TiO2 in equilibrium (1273 K) in the gas phase of controlled oxygen activity (10−13 Pa < p(O2) < 105 Pa). The obtaind data on the concentration of electronic charge carriers have been used for the determination of the effect of p(O2) on the change of Fermi energy within the band gap. The determined diagram may be applied for the selection of processing conditions of undoped TiO2 with controlled semiconducting properties and the ability to donate or accept electrons.

Paper Details

Date Published: 24 August 2009
PDF: 7 pages
Proc. SPIE 7408, Solar Hydrogen and Nanotechnology IV, 74080A (24 August 2009); doi: 10.1117/12.824509
Show Author Affiliations
Janusz Nowotny, Univ. of Western Sydney (Australia)
Tadeusz Bak, Univ. of Western Sydney (Australia)

Published in SPIE Proceedings Vol. 7408:
Solar Hydrogen and Nanotechnology IV
Frank E. Osterloh, Editor(s)

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