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Proceedings Paper

Si integrated pyroelectric sensor array using epitaxial γ-Al2O3/Si substrates and epitaxial PZT thin films
Author(s): Daisuke Akai; Naoki Kawazu; Takahiro Sugai; Kazuaki Sawada; Makoto Ishida
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Paper Abstract

In this paper, we report that integrated pyroelectric infrared(IR) sensor array using surface micromachine technique with nMOS/nJFET devices on epitaxial γ-Al2O3/Si substrates has been successfully fabricated. Orientation and crystallinity control of pyroelectric and ferroelectric films are important to archive high sensitivity pyroelectric IR detector. We propose epitaxial γ-Al2O3 thin films as buffer layer on Si substrates to control them. Each pixel of fabricated IR sensor array has a thermally isolated Au/PZT(001)/Pt(001)/γ-Al2O3 stacked membrane detector, a low noise nJFET source follower and a switching nMOSFET. A voltage sensitivity of a fabricated detector is increased by forming thermal isolated structure. The fabricated sensor operated under a chopping frequency of 100 Hz. The RV, NEP and D* at 30 Hz are 1703 V/W, 7.22 × 10-11 WHz-1/2 and 1.38 × 108 cmHz1/2W-1, respectively. This sensor will have potential for Si integrated pyroelectric IR imager.

Paper Details

Date Published: 20 August 2009
PDF: 9 pages
Proc. SPIE 7419, Infrared Systems and Photoelectronic Technology IV, 741905 (20 August 2009); doi: 10.1117/12.824370
Show Author Affiliations
Daisuke Akai, Toyohashi Univ. of Technology (Japan)
Naoki Kawazu, Toyohashi Univ. of Technology (Japan)
Takahiro Sugai, Toyohashi Univ. of Technology (Japan)
Kazuaki Sawada, Toyohashi Univ. of Technology (Japan)
Japan Science and Technology Agency (Japan)
Makoto Ishida, Toyohashi Univ. of Technology (Japan)
Japan Science and Technology Agency (Japan)


Published in SPIE Proceedings Vol. 7419:
Infrared Systems and Photoelectronic Technology IV
Eustace L. Dereniak; Randolph E. Longshore; Ashok K. Sood; John P. Hartke; Paul D. LeVan, Editor(s)

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