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Proceedings Paper

Model-based assist feature insertion for sub-40nm memory device
Author(s): Sungsoo Suh; Suk-joo Lee; Seong-woon Choi; Sung-Woo Lee; Chan-hoon Park
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Paper Abstract

Many issues need to be resolved for a production-worthy model based assist feature insertion flow for single and double exposure patterning process to extend low k1 process at 193 nm immersion technology. Model based assist feature insertion is not trivial to implement either for single and double exposure patterning compared to rule based methods. As shown in Fig. 1, pixel based mask inversion technology in itself has difficulties in mask writing and inspection although it presents as one of key technology to extend single exposure for contact layer. Thus far, inversion technology is tried as a cooptimization of target mask to simultaneously generate optimized main and sub-resolution assists features for a desired process window. Alternatively, its technology can also be used to optimize for a target feature after an assist feature types are inserted in order to simplify the mask complexity. Simplification of inversion mask is one of major issue with applying inversion technology to device development even if a smaller mask feature can be fabricated since the mask writing time is also a major factor. As shown in Figure 2, mask writing time may be a limiting factor in determining whether or not an inversion solution is viable. It can be reasoned that increased number of shot counts relates to increase in margin for inversion methodology. On the other hand, there is a limit on how complex a mask can be in order to be production worthy. There is also source and mask co-optimization which influences the final mask patterns and assist feature sizes and positions for a given target. In this study, we will discuss assist feature insertion methods for sub 40-nm technology.

Paper Details

Date Published: 11 May 2009
PDF: 9 pages
Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73792T (11 May 2009); doi: 10.1117/12.824343
Show Author Affiliations
Sungsoo Suh, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Suk-joo Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Seong-woon Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sung-Woo Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Chan-hoon Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7379:
Photomask and Next-Generation Lithography Mask Technology XVI
Kunihiro Hosono, Editor(s)

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