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Proceedings Paper

Go proton: investigation on mask patterning for the 22nm hp node using a ML2 multibeam system
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Paper Abstract

A mask patterning process based on proton multi-beam exposure in combination with Opaque-Molybdenum-Over-Glass (OMOG) hard mask blank material has been developed. As non-chemically amplified resist, HSQ has been selected. Using the IMS Nanofabrication proof of concept proton Multi Beam System which is designed for 43,000 programmable ion beams, an acceptable exposure dose of around 25μC/cm2 has been determined for 10 keV protons. Assessment of the process flow has been done in terms of dose latitude, LER, LWR, CD variation, and resolution capability.

Paper Details

Date Published: 11 May 2009
PDF: 12 pages
Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73792O (11 May 2009); doi: 10.1117/12.824338
Show Author Affiliations
Joerg Butschke, Institut für Mikroelektronik Stuttgart Chips (Germany)
Mathias Irmscher, Institut für Mikroelektronik Stuttgart Chips (Germany)
Holger Sailer, Institut für Mikroelektronik Stuttgart Chips (Germany)
Hans Loeschner, Institut für Mikroelektronik Stuttgart Nanofabrication AG (Austria)
Elmar Platzgummer, Institut für Mikroelektronik Stuttgart Nanofabrication AG (Austria)


Published in SPIE Proceedings Vol. 7379:
Photomask and Next-Generation Lithography Mask Technology XVI
Kunihiro Hosono, Editor(s)

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