Share Email Print
cover

Proceedings Paper

FIB mask repair technology for EUV mask
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We evaluated a FIB-CVD (Focused Ion Beam-Chemical Vapor Deposition) process for repairing clear defects on EUV masks. For the CVD film, we selected Carbon material. Our simulation result showed that the properties of wafer-prints depended on the density of the carbon films deposited for repairing the clear defects. Especially, when the density of carbon film was higher than that of graphite the properties of the wafer-prints came out to be almost same as obtained from Ta-based absorbers. For CVD, in this work we employed typical carbon based precursor that has been routinely used for repairing photomask patterns. The defects created for our evaluation were line-cut defects in a hp225nm L/S pattern. The performance of defect repair was evaluated by SFET (Small Field Exposure Tool) printability test. The study showed that the focus characteristic of repaired region deteriorated as the thickness of the deposition film decreased, especially when the thickness went below the thickness of the absorber. However, when the deposition film thickness was same as that of the absorber film, focus characteristic was found to be excellent. The study also revealed that wafer-print CDs could be controlled by controlling the CDs of the deposition films. The durability of deposition films against the buffer layer etching process and hydrogen radical cleaning process is also discussed.

Paper Details

Date Published: 11 May 2009
PDF: 9 pages
Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73792L (11 May 2009); doi: 10.1117/12.824335
Show Author Affiliations
Tsuyoshi Amano, MIRAI Semiconductor Leading Edge Technologies, Inc. (Japan)
Yasushi Nishiyama, MIRAI Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroyuki Shigemura, MIRAI Semiconductor Leading Edge Technologies, Inc. (Japan)
Tsuneo Terasawa, MIRAI Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, MIRAI Semiconductor Leading Edge Technologies, Inc. (Japan)
Kensuke Shiina, SII NanoTechnology Inc. (Japan)
Fumio Aramaki, SII NanoTechnology Inc. (Japan)
Anto Yasaka, SII NanoTechnology Inc. (Japan)
Tsukasa Abe, Dai Nippon Printing Co., ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., ltd. (Japan)


Published in SPIE Proceedings Vol. 7379:
Photomask and Next-Generation Lithography Mask Technology XVI
Kunihiro Hosono, Editor(s)

© SPIE. Terms of Use
Back to Top