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Proceedings Paper

A noble evaluation method for repaired area utilizing SEM images
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Paper Abstract

In general photomask defect repair process flow, repaired portion is evaluated with AIMSTM and if AIMSTM's result is out of specification, the repaired portion must be re-repaired. With shrinking pattern on device, tighter specification is required. Therefore re-repair cycle time increases and turn around time of defect repair process becomes much longer. To solve this problem, we propose a noble evaluation method that enables us to judge without using AIMSTM with repair tool images. Images of EB repair tool is available for our propose because EB repair tool dose not give any damage on substrate and the resolution of image is quite high compared to other repair tools, FIB and Nanomachining tool. We made lithography simulation and practical experiments with line & space pattern of ArFatt. PSM with programmed defects. Consequently, we can predict AIMS-Results immediately after repair and there is a possibility to reduce the turn around time of defect repair process.

Paper Details

Date Published: 11 May 2009
PDF: 8 pages
Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73792C (11 May 2009); doi: 10.1117/12.824326
Show Author Affiliations
Keiko Morishita, Toshiba Corp. Semiconductor Co. (Japan)
Shingo Kanamitsu, Toshiba Corp. Semiconductor Co. (Japan)
Takashi Hirano, Toshiba Corp. Semiconductor Co. (Japan)


Published in SPIE Proceedings Vol. 7379:
Photomask and Next-Generation Lithography Mask Technology XVI
Kunihiro Hosono, Editor(s)

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