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Proceedings Paper

Quantification of electron-beam proximity effects using a virtual direct write environment
Author(s): Martin Schulz; Peter Brooker; Alex Zepka; Gary Meyers
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Paper Abstract

An e-beam exposure module has been developed for an existing lithography simulator, covering aspects of e-beam inter-action with the stack, exposure of the resist by the e-beam as well as development of the resist. The goal of the simulation is to complement experimental data with insights that are difficult or impossible to obtain experimentally and to provide advanced capabilities for process optimization. Simulations are performed for an iso-dense pattern to show that in the case of 5kV acceleration voltage, a standard dose correction works well for tight beams with 5nm blur but is very challenging for 30nm beam blur. Geometric corrections will most likely be needed for a wide beam blur.

Paper Details

Date Published: 11 May 2009
PDF: 11 pages
Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 737921 (11 May 2009); doi: 10.1117/12.824314
Show Author Affiliations
Martin Schulz, Synopsys GmbH (Germany)
Peter Brooker, Synopsys, Inc. (United States)
Alex Zepka, Synopsys, Inc. (United States)
Gary Meyers, Synopsys, Inc. (United States)


Published in SPIE Proceedings Vol. 7379:
Photomask and Next-Generation Lithography Mask Technology XVI
Kunihiro Hosono, Editor(s)

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