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Proceedings Paper

Study of electric-field-induced-development method
Author(s): Masatoshi Terayama; Hideaki Sakurai; Mari Sakai; Masamitsu Ito; Osamu Ikenaga; Hideo Funakoshi; Takahiro Shiozawa; Syoutarou Miyazaki; Yoshihiko Saito; Naoya Hayashi
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Paper Abstract

Mask development process for 2x nm node devices needs stringent CD uniformity and CD linearity. To evaluate and improve these CD qualities, we proposed to introduce electric-field-induced-development method into proximity gap suction development system (PGSD). It is the way to develop with applying electric potential to the metallic development nozzle to stimulate the movement of hydroxide ions. In this paper, we will report the effect of electric-field-induced-development method on CD uniformity and CD linearity.

Paper Details

Date Published: 11 May 2009
PDF: 8 pages
Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73791X (11 May 2009); doi: 10.1117/12.824310
Show Author Affiliations
Masatoshi Terayama, Toshiba Corp. (Japan)
Hideaki Sakurai, Toshiba Corp. (Japan)
Mari Sakai, Toshiba Corp. (Japan)
Masamitsu Ito, Toshiba Corp. (Japan)
Osamu Ikenaga, Toshiba Corp. (Japan)
Hideo Funakoshi, Tokyo Electron Kyushu Ltd. (Japan)
Takahiro Shiozawa, Tokyo Electron Ltd. (Japan)
Syoutarou Miyazaki, Tokyo Electron Ltd. (Japan)
Yoshihiko Saito, Tokyo Electron Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 7379:
Photomask and Next-Generation Lithography Mask Technology XVI
Kunihiro Hosono, Editor(s)

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