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Proceedings Paper

Plasma optical emission analysis for chamber condition monitor
Author(s): Zhigang Mao; Tiecheng Zhou; Michael Grimbergen; Darin Bivens; David Knick; Renee Koch; Madhavi Chandrachood; Jeff Chen; Ibrahim Ibrahim; Ajay Kumar
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Paper Abstract

Optical emission represents the bulk property of plasma, which in turn can be correlated to the chamber surface condition and can be exploited for monitoring and characterizing chamber condition. This presentation demonstrates the approach of utilizing plasma optical emission spectra (OES) for the application on Applied Materials' TetraTM etcher chamber condition monitor. Time-resolved plasma optical emission spectra are collected with a spectrometry unit built in to the TetraTM photomask etch module. Studies on OES analysis show that information related to chamber surface condition can be correlated to the changes in emission spectrum of plasma. The effectiveness of this methodology can be verified by Cr etch rates. Results can lead to procedure development for chamber monitoring, chamber recovery and chamber seasoning applications.

Paper Details

Date Published: 11 May 2009
PDF: 8 pages
Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73791U (11 May 2009); doi: 10.1117/12.824306
Show Author Affiliations
Zhigang Mao, Applied Materials, Inc. (United States)
Tiecheng Zhou, Applied Materials, Inc. (United States)
Michael Grimbergen, Applied Materials, Inc. (United States)
Darin Bivens, Applied Materials, Inc. (United States)
David Knick, Applied Materials, Inc. (United States)
Renee Koch, Applied Materials, Inc. (United States)
Madhavi Chandrachood, Applied Materials, Inc. (United States)
Jeff Chen, Applied Materials, Inc. (United States)
Ibrahim Ibrahim, Applied Materials, Inc. (United States)
Ajay Kumar, Applied Materials, Inc. (United States)


Published in SPIE Proceedings Vol. 7379:
Photomask and Next-Generation Lithography Mask Technology XVI

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