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Proceedings Paper

Evaluation for EAPSM life time by ArF pellicle characteristic
Author(s): Kang Joon Seo; Ji Sun Ryu; Goo Min Jeong; Shin Cheol Kang; Yong Dae Kim; Sang Chul Kim; Chang Yeol Kim
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Paper Abstract

As the nano-lithography technology continues to develop towards advanced generation of ArF immersion lithography, the quality of ArF EAPSM becomes the most valuable factor for worldwide Maskshop. Therefore outturn of ArF EAPMS increase continuously, and people who work in the fields of semiconductor engineering give consequence to good quality of ArF EAPSM until the EUV lithography generation. Because 300mm wafer litho-facility use higher exposure energy, wider shot field and more shots per a wafer for achieving more memory(DRAM or Flash) chips than 200mm exposure facility, photo engineer wants unchanged initial condition of mask quality(CD MTT, CD Uniformity, repeating defect, phase shift and transmittance). In other words, mask manufacturer must focus on the concept of ArF EAPSM 'life time'. We have investigated the influence grade inducing the lithographic variation between the growth of exposure energy based Haze phenomena, thin organic pellicle membrane characteristics, and we have verified that the ArF pellicle durability is one of the most important evidence for improvement of life time of ArF EAPSM. In this study, related with ArF EAPSM life time, we tried to evaluate the influence of ArF pellicle characteristic consisting of pellicle membrane transmittance strength (durability against ArF laser source) and non acid mask condition for the period of non Haze contamination without added re-pellicle → re-cleaning cycle. Metrological inspection and evaluation was conducted with several equipment and analysis including mask inspection, Scatterometer, IC, ArF laser accelerator.

Paper Details

Date Published: 11 May 2009
PDF: 7 pages
Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73791S (11 May 2009); doi: 10.1117/12.824304
Show Author Affiliations
Kang Joon Seo, Hynix Semiconductor Inc. (Korea, Republic of)
Ji Sun Ryu, Hynix Semiconductor Inc. (Korea, Republic of)
Goo Min Jeong, Hynix Semiconductor Inc. (Korea, Republic of)
Shin Cheol Kang, Hynix Semiconductor Inc. (Korea, Republic of)
Yong Dae Kim, Hynix Semiconductor Inc. (Korea, Republic of)
Sang Chul Kim, Hynix Semiconductor Inc. (Korea, Republic of)
Chang Yeol Kim, Hynix Semiconductor Inc. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7379:
Photomask and Next-Generation Lithography Mask Technology XVI
Kunihiro Hosono, Editor(s)

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