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Proceedings Paper

Novel OPC and DfM methodology for 3D memory device
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Paper Abstract

Novel optical proximity correction (OPC) and design for manufacturability (DfM) methodology for threedimensional (3D) memory device is proposed to overcome emerging hotspot issues caused by larger process proximity effect (PPE) due to unavoidable high-aspect patterning process. To realize robust pattern formation for lithography and reactive-ion etching (RIE) processes, the following methodologies are introduced: i) OPC is carried out by using averaged or designed optics not ideal to make robust pattern formation for optical variation of exposure tool, ii) lithography compliance check (LCC) is done under the worst optical condition to detect hotspots induced by optical variation of exposure tool, and modification of layout and OPC condition is performed to remove hotspots, iii) hotspots induced by RIE process are checked by using etching simulation with empirical RIE model, and modification of layout, PPC and OPC scheme is performed to remove hotspots. In this study, it is confirmed that our proposed novel OPC and DfM methodology is promising for robust pattern formation in upcoming 3D memory device.

Paper Details

Date Published: 11 May 2009
PDF: 8 pages
Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73791O (11 May 2009); doi: 10.1117/12.824301
Show Author Affiliations
Takafumi Taguchi, Toshiba Corp. Semiconductor Co. (Japan)
Toshiya Kotani, Toshiba Corp. Semiconductor Co. (Japan)
Hidefumi Mukai, Toshiba Corp. Semiconductor Co. (Japan)
Hiromitsu Mashita, Toshiba Corp. Semiconductor Co. (Japan)
Katsumi Iyanagi, Toshiba Corp. Semiconductor Co. (Japan)
Koji Hashimoto, Toshiba Corp. Semiconductor Co. (Japan)
Soichi Inoue, Toshiba Corp. Semiconductor Co. (Japan)

Published in SPIE Proceedings Vol. 7379:
Photomask and Next-Generation Lithography Mask Technology XVI
Kunihiro Hosono, Editor(s)

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