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Proceedings Paper

E-beam shot count estimation at 32 nm HP and beyond
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Paper Abstract

Recent Low k1 era requires aggressive OPC technology with advanced lithography technology. The aggressive OPC contains the rounded pattern and a lot of assistant pattern which are the main source to increase the shot division. We have defined the shot complexity, which is defined by the ratio of number of shot between the interested pattern and the 1:1 L/S pattern. Based on shot complexity parameter, we have estimated the writing time as the device node decreases. We expect that the aggressive OPC and the high dose could generate severely the writing time issue in 32nm node era.

Paper Details

Date Published: 11 May 2009
PDF: 9 pages
Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 737917 (11 May 2009); doi: 10.1117/12.824284
Show Author Affiliations
Jin Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sang Hee Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Dongseok Nam, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Byung Gook Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sang-Gyun Woo, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Han Ku Cho, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7379:
Photomask and Next-Generation Lithography Mask Technology XVI
Kunihiro Hosono, Editor(s)

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