Share Email Print
cover

Proceedings Paper

Phase behavior through pitch and duty cycle and its impact on process window
Author(s): Ute Buttgereit; Robert Birkner; Dirk Seidel; Sascha Perlitz; Vicky Philipsen; Peter De Bisschop
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Immersion lithography has moved into 45nm node and will soon go into 32nm node. Alternating Phase Shifting Masks (alt. PSM's) are one of the most effective methods to enhance resolution and process window. . However there are two major challenges: intensity balancing and quartz dry etch process. The dry etch process requires not only an uniform quartz etch but also a good linearity over a wide range of feature sizes to ensure a 180° phase shift through pitch and duty cycle. Phase errors lead to an image placement error during printing becoming even worse through focus. As feature sizes shrink imaging effects and 3D mask effects impact the phase shift and accurate phase shift measurement becomes extremely important. In this paper we report on phase shift measurements through pitch and duty cycle on alt. PSM taken on the newly developed phase metrology system Phame® and compare them to rigorous 3D simulations. Furthermore we correlate the phase shift measurements to process window data such as maximum exposure latitude. Through pitch investigations on alt. PSM show that for print pitches below 200nm (wafer level) the phase shift drops significantly below 180° which will lead to an image placement error during printing and a shrinking process window. Furthermore a strong correlation between phase shift and maximum exposure latitude is shown. Largest maximum exposure latitude is achieved for phase shift close to 180°. Phame® enables optical phase shift measurement in critical production features down to 120nm half pitch providing the opportunity to optimize the quartz dry etch process in terms of signature and linearity. This will help to optimize the phase shift of critical features on alt. PSM for largest process window and hence increase end of line yields for reducing overall chip manufacturing costs.

Paper Details

Date Published: 11 May 2009
PDF: 9 pages
Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 737916 (11 May 2009); doi: 10.1117/12.824283
Show Author Affiliations
Ute Buttgereit, Carl Zeiss SMS GmbH (Germany)
Robert Birkner, Carl Zeiss SMS GmbH (Germany)
Dirk Seidel, Carl Zeiss SMS GmbH (Germany)
Sascha Perlitz, Carl Zeiss SMS GmbH (Germany)
Vicky Philipsen, IMEC (Belgium)
Peter De Bisschop, IMEC (Belgium)


Published in SPIE Proceedings Vol. 7379:
Photomask and Next-Generation Lithography Mask Technology XVI
Kunihiro Hosono, Editor(s)

© SPIE. Terms of Use
Back to Top