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Proceedings Paper

Mask-induced aberration in EUV lithography
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Paper Abstract

We estimated aberrations using Zernike sensitivity analysis. We found the difference of the tolerated aberration with line direction for illumination. The tolerated aberration of perpendicular line for illumination is much smaller than that of parallel line. We consider this difference to be attributable to the mask 3D effect. We call it mask-induced aberration. In the case of the perpendicular line for illumination, there was a difference in CD between right line and left line without aberration. In this report, we discuss the possibility of pattern formation in NA 0.25 generation EUV lithography tool. In perpendicular pattern for EUV light, the dominant part of aberration is mask-induced aberration. In EUV lithography, pattern correction based on the mask topography effect will be more important.

Paper Details

Date Published: 11 May 2009
PDF: 8 pages
Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73790P (11 May 2009); doi: 10.1117/12.824266
Show Author Affiliations
Yumi Nakajima, Toshiba Corp. (Japan)
Takashi Sato, Toshiba Corp. (Japan)
Ryoichi Inanami, Toshiba Corp. (Japan)
Tetsuro Nakasugi, Toshiba Corp. (Japan)
Tatsuhiko Higashiki, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 7379:
Photomask and Next-Generation Lithography Mask Technology XVI

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