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Proceedings Paper

Implications of image plane line-edge roughness requirements on extreme ultraviolet mask specifications
Author(s): Patrick P. Naulleau; Simi A. George
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Paper Abstract

Achieving line-edge/width roughness (LER/LWR) specifications remains as one of the most significant challenges facing the commercialization of extreme ultraviolet (EUV) lithography. LER is typically viewed as a resist problem; however, recent simulation results have shown that the mask can also be a significant contributor. Problems arise from both mask absorber LER as well as mask multilayer roughness leading to random phase variations in the reflected beam and consequently speckle. Here we describe these effects in detail and explore how they will impact EUV mask requirements for the 22-nm half-pitch node and beyond. Process window analysis yields mask multilayer roughness specifications on the order of 50 pm.

Paper Details

Date Published: 11 May 2009
PDF: 11 pages
Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73790O (11 May 2009); doi: 10.1117/12.824265
Show Author Affiliations
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
Simi A. George, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 7379:
Photomask and Next-Generation Lithography Mask Technology XVI
Kunihiro Hosono, Editor(s)

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