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Proceedings Paper

Inspection and repair for imprint lithography at 32 nm and below
Author(s): Kosta Selinidis; Ecron Thompson; S. V. Sreenivasan; Douglas J. Resnick; Marcus Pritschow; Joerg Butschke; Mathias Irmscher; Holger Sailer; Harald Dobberstein
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Paper Abstract

Step and Flash Imprint involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed leaving a patterned solid on the substrate. Compatibility with existing CMOS processes requires a mask infrastructure in which resolution, inspection and repair are all addressed. The purpose of this paper is to understand the progress made in inspection and repair of 1X imprint masks A 32 nm programmed defect mask was fabricated. Patterns included in the mask consisted of an SRAM Metal 1 cell, dense lines, and dense arrays of pillars. Programmed defect sizes started at 4 nm and increased to 48 nm in increments of 4 nm. These defects were then inspected using three different electron beam inspection systems. Defect sizes as small as 8 nm were detected, and detection limits were found to be a function of defect type. Both subtractive and additive repairs were attempted on SRAM Metal 1 cells. Repairs as small as 32nm were demonstrated, and the repair process was successfully tested for several hundreds of imprints.

Paper Details

Date Published: 11 May 2009
PDF: 12 pages
Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73790N (11 May 2009); doi: 10.1117/12.824264
Show Author Affiliations
Kosta Selinidis, Molecular Imprints, Inc. (United States)
Ecron Thompson, Molecular Imprints, Inc. (United States)
S. V. Sreenivasan, Molecular Imprints, Inc. (United States)
Douglas J. Resnick, Molecular Imprints, Inc. (United States)
Marcus Pritschow, Institut für Mikroelektronik Stuttgart (Germany)
Joerg Butschke, Institut für Mikroelektronik Stuttgart (Germany)
Mathias Irmscher, Institut für Mikroelektronik Stuttgart (Germany)
Holger Sailer, Institut für Mikroelektronik Stuttgart (Germany)
Harald Dobberstein, NaWoTec GmbH, Carl Zeiss SMT Co. (Germany)


Published in SPIE Proceedings Vol. 7379:
Photomask and Next-Generation Lithography Mask Technology XVI
Kunihiro Hosono, Editor(s)

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