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Proceedings Paper

Thorough characterization of an EUV mask
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Paper Abstract

We reported that we were successful in our 45nm technology node device demonstration in February 2008 and 22nm node technology node device patterning in February 2009 using ASML's Alpha Demo Tool (ADT).1, 2, 3 In order to insert extreme ultraviolet (EUV) lithography at the 15nm technology node and beyond, we have thoroughly characterized one EUV mask, a so-called NOVACD mask. In this paper, we report on three topics. The first topic is an analysis of line edge roughness (LER) using a mask Scanning Electron Microscope (SEM), an Atomic Force Microscope (AFM) and the Actinic Inspection Tool (AIT) to compare resist images printed with the ASML ADT. The results of the analysis show a good correlation between the mask AFM and the mask SEM measurements. However, the resist printing results for the isolated space patterns are slightly different. The cause of this discrepancy may be resist blur, image log slope and SEM image quality and so on. The second topic is an analysis of mask topography using an AFM and relative reflectivity of mirror and absorber surface using the AIT. The AFM data show 6 and 7 angstrom rms roughness for mirror and absorber, respectively. The reflectivity measurements show that the mirror reflects EUV light about 20 times higher than absorber. The last topic is an analysis of a 32nm technology node SRAM cell which includes a comparison of mask SEM image, AIT image, resist image and simulation results. The ADT images of the SRAM pattern were of high quality even though the mask patters were not corrected for OPC or any EUV-specific effects. Image simulation results were in good agreement with the printing results.

Paper Details

Date Published: 11 May 2009
PDF: 11 pages
Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73790J (11 May 2009); doi: 10.1117/12.824260
Show Author Affiliations
Hiroyuki Mizuno, Toshiba America Electronic Components, Inc. (United States)
Gregory McIntyre, IBM Advanced Lithography Research (United States)
Chiew-seng Koay, IBM Advanced Lithography Research (United States)
Martin Burkhardt, IBM Corp. (United States)
Long He, SEMATECH, Inc. (United States)
John Hartley, College of Nanoscale Science and Engineering (United States)
Corbet Johnson, College of Nanoscale Science and Engineering (United States)
Sudharshanan Raghunathan, College of Nanoscale Science and Engineering (United States)
Kenneth Goldberg, Lawrence Berkeley National Lab. (United States)
Iacopo Mochi, Lawrence Berkeley National Lab. (United States)
Bruno La Fontaine, GLOBALFOUNDARIES (United States)
Obert Wood, GLOBALFOUNDARIES (United States)


Published in SPIE Proceedings Vol. 7379:
Photomask and Next-Generation Lithography Mask Technology XVI
Kunihiro Hosono, Editor(s)

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