Share Email Print
cover

Proceedings Paper

Improvement of EUVL mask blank inspection capability at Intel
Author(s): Andy Ma; Ted Liang; Seh-Jin Park; Guojing Zhang; Tomoya Tamura; Kazunori Omata; Yuta Sato; Hal Kusunose
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Extreme ultraviolet lithography (EUVL) is a leading technology to succeed optical lithography for high volume production of 22 nm node and beyond. One of the top risks for EUVL is the readiness of defect-free masks, especially the availability of Mo/Si mask blanks with acceptable defect level. Fast, accurate and repeatable defect inspection of substrate and multi-layer (ML) blank is critical for process development by both blank suppliers and mask makers. In this paper we report the results of performance improvements on a latest generation mask blank inspection tool from Lasertec Corporation; the MAGICS M7360 at Intel Corporation's EUV Mask Pilot Line. Inspection repeatability and sensitivity for both quartz substrates (Qz) and ML blanks are measured and compared with the previous Phase I tool M7360. Preliminary results of high speed scan correction mirror implementation are also presented

Paper Details

Date Published: 11 May 2009
PDF: 11 pages
Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73790I (11 May 2009); doi: 10.1117/12.824259
Show Author Affiliations
Andy Ma, Intel Corp. (United States)
Ted Liang, Intel Corp. (United States)
Seh-Jin Park, Intel Corp. (United States)
Guojing Zhang, Intel Corp. (United States)
Tomoya Tamura, Lasertec Corp. (Japan)
Kazunori Omata, Lasertec Corp. (Japan)
Yuta Sato, Lasertec Corp. (Japan)
Hal Kusunose, Lasertec Corp. (Japan)


Published in SPIE Proceedings Vol. 7379:
Photomask and Next-Generation Lithography Mask Technology XVI
Kunihiro Hosono, Editor(s)

© SPIE. Terms of Use
Back to Top