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Proceedings Paper

Actinic EUVL mask blank inspection and phase defect characterization
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Paper Abstract

We have developed an actinic full-field mask blank inspection system to detect multilayer phase defects with dark field imaging. Using this system a non-commercial mask was inspected and real defects were detected by setting the system at low false detection threshold. A 1.5 mm square area (containing no absorber) was inspected three times, and probabilities of defect detection and false detection were evaluated. Of the total number detected, 81.5 % of them exhibited 100% percent probability of detection, while 0.8 % of them indicated false detection. The same area was also inspected with a conventional inspection system, and both inspection results then were compared. Among the defects detected, 94 % of them could be detected only with the actinic system, while 1.1 % of them could be detected only with the conventional laser-based inspection system. The detected defects were observed with AFM and SEM. In summary, phase defects smaller than 100 nm could be detected only with the actinic system, while particles smaller than 200 nm could be detected only with the conventional system.

Paper Details

Date Published: 11 May 2009
PDF: 7 pages
Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73790H (11 May 2009); doi: 10.1117/12.824258
Show Author Affiliations
Takeshi Yamane, Semiconductor Leading Edge Technologies, Inc. (Japan)
Teruo Iwasaki, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshihiko Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Tsuneo Terasawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshihisa Tomie, National Institute of Advanced Industrial Science and Technology (Japan)


Published in SPIE Proceedings Vol. 7379:
Photomask and Next-Generation Lithography Mask Technology XVI

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