Share Email Print
cover

Proceedings Paper

Etch characterization of binary mask dependence on mask material and resist thickness for 22nm mask fabrication
Author(s): Satoru Nemoto; Thomas Faure; Richard Wistrom; Shaun Crawford; Gary Reid; Peter Bartlau; Toru Komizo; Amy E. Zweber
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Use of optical photomasks will extend to the 22-nm node and beyond. Mask minimum resolution and critical dimension (CD) requirements for this node are very challenging to the mask industry. Optimization of resist materials and resist thickness are key factors for improving CD performance. In general, thinner resists result in better minimum resolution performance. The minimum useable resist thickness is often linked to the chrome hard mask dry etching performance. More specifically, improvement of chrome etch rate selectivity to resist while simultaneously maintaining good CD performance is difficult. In order to use a very thin e-beam resist, the underlying chrome hard mask material thickness needs to be thin or it needs to be comprised of a material that has a fast etch rate and good dry etch selectivity to resist. Use of thin and/or fast etch rate hard mask materials that are capable of reducing dry etch induced CD error such as etch bias, etch bias uniformity, etch bias linearity, and etch global loading effect is required for meeting 22-nm mask requirements. In this paper, the dry etching effect dependence on hard mask thickness, hard mask material composition and resist thickness for building advanced binary masks for 22-nm node is studied. The results from this work will show that dry etch induced CD error such as etch bias, etch bias uniformity, etch bias linearity, and etch global loading effect are significantly improved by use of an ultra thin or high etch rate hard mask material.

Paper Details

Date Published: 11 May 2009
PDF: 11 pages
Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 737907 (11 May 2009); doi: 10.1117/12.824248
Show Author Affiliations
Satoru Nemoto, Toppan Photomasks, Inc. (United States)
Thomas Faure, IBM Corp. (United States)
Richard Wistrom, IBM Corp. (United States)
Shaun Crawford, IBM Corp. (United States)
Gary Reid, IBM Corp. (United States)
Peter Bartlau, IBM Corp. (United States)
Toru Komizo, Toppan Photomasks, Inc. (United States)
Amy E. Zweber, IBM Corp. (United States)


Published in SPIE Proceedings Vol. 7379:
Photomask and Next-Generation Lithography Mask Technology XVI
Kunihiro Hosono, Editor(s)

© SPIE. Terms of Use
Back to Top