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Proceedings Paper

Litho/mask strategies for 32-nm half-pitch and beyond: using established and adventurous tools/technologies to improve cost and imaging performance
Author(s): Burn J. Lin
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Paper Abstract

Cost and imaging are becoming big concerns in lithographic patterning of 32-nm half pitch and beyond, affecting the choice of lithographic patterning tools and the corresponding mask technology. In this paper, the cost and imaging aspects of ArF immersion double patterning, multiple e-beam maskless lithography, and extreme-uv lithography are discussed with proposals to make the cost acceptable. The impacts of these technologies to the masking industry are quite different. They are also given here. Some comments are made on nano-imprint lithography.

Paper Details

Date Published: 11 May 2009
PDF: 11 pages
Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 737902 (11 May 2009); doi: 10.1117/12.824243
Show Author Affiliations
Burn J. Lin, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 7379:
Photomask and Next-Generation Lithography Mask Technology XVI
Kunihiro Hosono, Editor(s)

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