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Proceedings Paper

Fabrication of III-V semiconductor quantum dots
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Paper Abstract

We propose a method for the fabrication of self-assembled semiconductor quantum dots (QDs) and the control of their density and emission wavelength. This method would be fundamental toward the fabrication of nanophotonic devices. We used molecular beam epitaxy and fabricated self-assembled QDs from various materials under various growth conditions. We controlled the emission wavelength over a wide range (700-1700 nm) by changing the materials around the QDs. We used antimonide-related materials or a highly stacked structure to control the density of the obtained QDs within the range of 108-1013/cm2.

Paper Details

Date Published: 2 September 2009
PDF: 10 pages
Proc. SPIE 7395, Plasmonics: Nanoimaging, Nanofabrication, and their Applications V, 739507 (2 September 2009); doi: 10.1117/12.824233
Show Author Affiliations
Kouichi Akahane, National Institute of Information and Communications Technology (Japan)
Naokatsu Yamamoto, National Institute of Information and Communications Technology (Japan)


Published in SPIE Proceedings Vol. 7395:
Plasmonics: Nanoimaging, Nanofabrication, and their Applications V
Satoshi Kawata; Vladimir M. Shalaev; Din Ping Tsai, Editor(s)

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