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Proceedings Paper

Spin noise spectroscopy in semiconductors
Author(s): Michael Oestreich; Michael Römer; Georg Müller; Dieter Schuh; Werner Wegscheider; Jens Hübner
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Paper Abstract

We demonstrate spin noise spectroscopy as an efficient and surprisingly sensitive experimental tool to measure the spin dynamics of free and localized carriers in semiconductors. The technique suppresses perturbations and gives access to intrinsic spin relaxation times by omitting optical excitation. We show the power of spin noise spectroscopy for basic physics by measurements on n-type modulation doped (110) GaAs quantum wells. The measurements reveal that the spin relaxation times are limited by stochastic spin-orbit fields and that the spin can be used as marker for the observation of electron diffusion processes at thermal equilibrium. We show the power of spin noise spectroscopy for applied physics, by three dimensional measurements of the doping distribution in direct semiconductors.

Paper Details

Date Published: 18 August 2009
PDF: 9 pages
Proc. SPIE 7398, Spintronics II, 739802 (18 August 2009); doi: 10.1117/12.824177
Show Author Affiliations
Michael Oestreich, Leibniz Univ. Hannover (Germany)
Michael Römer, Leibniz Univ. Hannover (Germany)
Georg Müller, Leibniz Univ. Hannover (Germany)
Dieter Schuh, Univ. Regensburg (Germany)
Werner Wegscheider, Univ. Regensburg (Germany)
Jens Hübner, Leibniz Univ. Hannover (Germany)


Published in SPIE Proceedings Vol. 7398:
Spintronics II
Manijeh Razeghi; Henri-Jean M. Drouhin; Jean-Eric Wegrowe, Editor(s)

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