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Proceedings Paper

Transport imaging with near-field scanning optical microscopy
Author(s): Nancy M. Haegel; Chun-Hong Low; Lee Baird; Goon-Hwee Ang
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Paper Abstract

Direct imaging of charge transport is obtained in luminescent materials by combining the excitation capability and resolution of a scanning electron microscope (SEM) with high sensitivity optical imaging. A regular optical microscope (OM) or a near field scanning optical microscope (NSOM) is operated within the SEM to allow for characterization of semiconductor materials by imaging the spatial variation of luminescence associated with minority carrier recombination. The NSOM system uses a Nanonics MultiView 2000 that allows for independent scanning of both sample and collecting fiber. The technique builds upon traditional cathodoluminescence (CL), but differs in that spatial information from the luminescence is maintained, allowing for direct imaging of carrier transport. The approach will be introduced with results from double heterostructures of GaAs and the effect of radiation damage on minority carrier diffusion lengths. Then, its application to structures requiring near field imaging will be illustrated with results from measurements of carrier diffusion in GaN nanowires.

Paper Details

Date Published: 22 May 2009
PDF: 9 pages
Proc. SPIE 7378, Scanning Microscopy 2009, 73782B (22 May 2009); doi: 10.1117/12.824114
Show Author Affiliations
Nancy M. Haegel, Naval Postgraduate School (United States)
Chun-Hong Low, Naval Postgraduate School (United States)
Lee Baird, Naval Postgraduate School (United States)
Goon-Hwee Ang, Naval Postgraduate School (United States)

Published in SPIE Proceedings Vol. 7378:
Scanning Microscopy 2009
Michael T. Postek; Michael T. Postek; Michael T. Postek; Dale E. Newbury; Dale E. Newbury; Dale E. Newbury; S. Frank Platek; S. Frank Platek; S. Frank Platek; David C. Joy; David C. Joy; David C. Joy, Editor(s)

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