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Proceedings Paper

Morphology issues of HgCdTe samples grown by MOCVD
Author(s): P. Madejczyk; A. Piotrowski; W. Gawron; K. Klos; A. Rogalski; J. Rutkowski
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Paper Abstract

Experimental results concerned morphology improvement of HgCdTe layers grown by MOCVD on GaAs substrates are presented. Selected growth parameters on morphology state have been discussed. The substrate issues like its quality and crystallographic orientation as well as misorientation play considerable role in final layer smoothness. We study HgCdTe layer thickness on its surface roughness. The MBE/MOCVD combination method had been adopted for CdTe buffer layer deposition. Extensive characterization studies using accessible equipment and methods: atomic force microscopy (AFM), secondary electron microscopy (SEM), laser scatterometer and Nomarski microscopy have provided invaluable information about the connection between defect formation and the influence of specific growth parameters.

Paper Details

Date Published: 6 May 2009
PDF: 10 pages
Proc. SPIE 7298, Infrared Technology and Applications XXXV, 729825 (6 May 2009); doi: 10.1117/12.823938
Show Author Affiliations
P. Madejczyk, Military Univ.of Technology (Poland)
A. Piotrowski, VIGO Systems S.A. (Poland)
W. Gawron, Military Univ.of Technology (Poland)
K. Klos, VIGO Systems S.A. (Poland)
A. Rogalski, Military Univ.of Technology (Poland)
J. Rutkowski, Military Univ.of Technology (Poland)

Published in SPIE Proceedings Vol. 7298:
Infrared Technology and Applications XXXV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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