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Proceedings Paper

Comparison of physical gate-CD with in-die at-speed non-contact measurements for bin-yield and process optimization
Author(s): J. S. Vickers; J. Galvier; W. Doedel; G. Steinbrueck; B. Borot; M. Gatefait; P. Gouraud; P. Gros; G. Johnson; M. Babazadeh; M. Pelella; N. Pakdaman
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Paper Abstract

We report on a performance-based measurement (PBM) technique from a volume production 65-nm multi-product wafer (MPW) process that shows far more sensitivity than the standard physical gate-length (CD) measurements. The performance (the electrical "effective" gate length, Leff) variation results measured by PBM can NOT be explained alone by CD (physical gate) measurement and show that the non-destructive (non-contact) PBM is able to monitor and control at first-level of electrical connectivity (≥ M1), the bin-yield determining in-die variation that are NOT captured or realized by physical CD measurement. Along with this higher sensitivity, we also show that the process-induced variation (excursion) has a distinct signature versus "nominal" expected behavior.

Paper Details

Date Published: 23 March 2009
PDF: 8 pages
Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72724C (23 March 2009); doi: 10.1117/12.823822
Show Author Affiliations
J. S. Vickers, tau-Metrix Inc. (United States)
J. Galvier, Crolles II Alliance (France)
W. Doedel, Crolles II Alliance (France)
G. Steinbrueck, tau-Metrix Inc. (United States)
B. Borot, Crolles II Alliance (France)
M. Gatefait, Crolles II Alliance (France)
P. Gouraud, Crolles II Alliance (France)
P. Gros, Crolles II Alliance (France)
G. Johnson, tau-Metrix Inc. (United States)
M. Babazadeh, tau-Metrix Inc. (United States)
M. Pelella, tau-Metrix Inc. (United States)
N. Pakdaman, tau-Metrix Inc. (United States)

Published in SPIE Proceedings Vol. 7272:
Metrology, Inspection, and Process Control for Microlithography XXIII
John A. Allgair; Christopher J. Raymond, Editor(s)

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