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Proceedings Paper

The optimization of bipolar magnetotransistor structures
Author(s): Mihaela Hnatiuc; George Căruntu
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Paper Abstract

In this paper work is analysed the structure of double collector vertical magnetotransistor realised in the bipolar integrated circuits technology. Based on the model of dual Hall devices, are established the main characteristics of device operating as magnetic sensors. By using the numerical simulation it is emphasized the way in which the adequate choise of its geometry and material features, allow the obtaining of high performance devices.

Paper Details

Date Published: 7 January 2009
PDF: 6 pages
Proc. SPIE 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 72972M (7 January 2009); doi: 10.1117/12.823706
Show Author Affiliations
Mihaela Hnatiuc, Constanta Maritime Univ. (Romania)
George Căruntu, Constanta Maritime Univ. (Romania)

Published in SPIE Proceedings Vol. 7297:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV
Paul Schiopu; Cornel Panait; George Caruntu; Adrian Manea, Editor(s)

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