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Proceedings Paper

Effects of laser field on the energy spectra in GaAs parabolic quantum wells
Author(s): Liliana M. Burileanu; Ecaterina C. Niculescu; Adrian Radu
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Paper Abstract

The binding energy of a shallow donor in a parabolic quantum well subjected to a longitudinal electric field and an intense laser field radiation is calculated with use of a variational method. It is shown that the electric field effect on the "dressed" impurity states depends on the position of the donor within a quantum well of finite depth. The laser field can essentially change single-electron spectra in the structure. This may be useful for understanding physical phenomena and designing optoelectronic devices.

Paper Details

Date Published: 7 January 2009
PDF: 4 pages
Proc. SPIE 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 72971U (7 January 2009); doi: 10.1117/12.823677
Show Author Affiliations
Liliana M. Burileanu, Politehnica Univ. of Bucharest (Romania)
Ecaterina C. Niculescu, Politehnica Univ. of Bucharest (Romania)
Adrian Radu, Politehnica Univ. of Bucharest (Romania)


Published in SPIE Proceedings Vol. 7297:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV
Paul Schiopu; Cornel Panait; George Caruntu; Adrian Manea, Editor(s)

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