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Proceedings Paper

Shallow acceptors in a quantum well under intense laser fields
Author(s): Adrian Radu; Ecaterina C. Niculescu; Liliana M. Burileanu
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Paper Abstract

In this paper we have studied comparatively the effects of the high-frequency laser field and impurity position on the transition energy associated with a simple neutral acceptor and with a singly ionized, double acceptor in GaAs/AlGaAs quantum wells. A blue shift of the transition energies when the laser field intensity increases is predicted.

Paper Details

Date Published: 7 January 2009
PDF: 4 pages
Proc. SPIE 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 72971S (7 January 2009); doi: 10.1117/12.823675
Show Author Affiliations
Adrian Radu, Politehnica Univ. of Bucharest (Romania)
Ecaterina C. Niculescu, Politehnica Univ. of Bucharest (Romania)
Liliana M. Burileanu, Politehnica Univ. of Bucharest (Romania)


Published in SPIE Proceedings Vol. 7297:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV
Paul Schiopu; Cornel Panait; George Caruntu; Adrian Manea, Editor(s)

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