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Proceedings Paper

Optical absorption and photoconductivity of As2Se3:Sn AND Sb2Se3:Sn thin film structures
Author(s): M. A. Iovu; M. S. Iovu; I. A. Vasiliev; D. V. Harea; I. A. Cojocaru; E. P. Colomeico; O. I. Shpotyuk
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Paper Abstract

The optical and photoelectrical characteristics of amorphous As2Se3:Sn and Sb2Se3:Sn prepared by vacuum evaporation on glass substrates are investigated. From the transmission spectra the changes of the refractive index under the light irradiation and heat treatment are calculated. The band gap for amorphous Sb2Se3 was found to be Eg=1.30 eV and decrease with increasing of the tin concentration up to Eg=1.0 eV for Sb2Se3:Sn10.0. The kinetics of photoinduced absorption in the investigated thin films was studied. The relaxation of the photocurrent has been recorded in the wide times scale (from 0.05 up to 25 s) and was determined by capture on the deep acceptor-like traps. The photoconductivity spectra of amorphous Sb2Se3 and Sb2Se3:Sn films in the photon energy range 1.0÷2.5 eV show the band connected with the presence of the defect states with the maximum located at 1.46 eV. The intensity of this band increases in the samples with tin impurity. The experimental data are discussed in framework of the model of the charged defects and non-equilibrium dielectric polarization in amorphous semiconductors.

Paper Details

Date Published: 7 January 2009
PDF: 4 pages
Proc. SPIE 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 729711 (7 January 2009); doi: 10.1117/12.823648
Show Author Affiliations
M. A. Iovu, Institute of Applied Physics (Moldova)
M. S. Iovu, Institute of Applied Physics (Moldova)
I. A. Vasiliev, Institute of Applied Physics (Moldova)
D. V. Harea, Institute of Applied Physics (Moldova)
I. A. Cojocaru, Institute of Applied Physics (Moldova)
E. P. Colomeico, Institute of Applied Physics (Moldova)
O. I. Shpotyuk, Scientific Research Co. Carat (Ukraine)


Published in SPIE Proceedings Vol. 7297:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV
Paul Schiopu; Cornel Panait; George Caruntu; Adrian Manea, Editor(s)

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