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Proceedings Paper

Simulations of 462 nm InGaN quantum well semiconductor lasers
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Paper Abstract

III-nitride semiconductor materials have received much attention in the past few years, due mainly to their relatively wide band gap and high emission efficiency. We simulated a 462 nm InGaN quantum well semiconductor laser, with different properties (different layer thicknesses, layer dopings and In composition in different layers of the structure) and we compared the results for the fourteen situations that we analyzed. Thus we can choose the best structure, in terms of the laser power and threshold current, to be used in applications.

Paper Details

Date Published: 6 January 2009
PDF: 4 pages
Proc. SPIE 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 72970F (6 January 2009); doi: 10.1117/12.823625
Show Author Affiliations
Andrei Drăgulinescu, Politehnica Univ. of Bucharest (Romania)
Antti Laakso, Tampere Univ. of Technology (Finland)
Mihail Dumitrescu, Tampere Univ. of Technology (Finland)
Mircea Guină, Tampere Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 7297:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV
Paul Schiopu; Cornel Panait; George Caruntu; Adrian Manea, Editor(s)

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