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Proceedings Paper

Simulations of dilute nitride quantum well InGaAsN semiconductor lasers
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Paper Abstract

We simulated several structures of dilute nitride quantum well InGaAsN semiconductor lasers that work at the wavelength of 1047 nm. InGaAsN is a new semiconductor alloy system having the remarkable property that the inclusion of only 2% of nitrogen reduces the bandgap by more than 30%. This alloy system can be successfully used for long wavelength laser systems and high-efficiency multi-junction solar cells. In this paper we compared several structures of dilute nitride quantum well InGaAsN semiconductor lasers in terms of the electrical properties such as the threshold current and the slope. By also comparing the optical properties of these structures, and taking into account the results obtained for the electrical properties, one can choose the structure with the best overall performances for being used in practical applications.

Paper Details

Date Published: 6 January 2009
PDF: 4 pages
Proc. SPIE 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 729707 (6 January 2009); doi: 10.1117/12.823615
Show Author Affiliations
Andrei Drăgulinescu, Politehnica Univ. of Bucharest (Romania)
Antti Laakso, Tampere Univ. of Technology (Finland)
Mihail Dumitrescu, Tampere Univ. of Technology (Finland)
Mircea Guina, Tampere Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 7297:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV
Paul Schiopu; Cornel Panait; George Caruntu; Adrian Manea, Editor(s)

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