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Proceedings Paper

Epitaxial growth a-plane ZnO films on a-GaN/r-Al2O3 templates
Author(s): Cheng Liu; Jiangnan Dai; Zhihao Wu; Xiangyun Han; Qinghua He; Chenhui Yu; Lei Zhang; Yihua Gao; Changqing Chen
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Paper Abstract

In this work, we have grown a-plane ZnO films on a-plane GaN/r-sapphire templates by pulsed laser deposition. The aplane GaN of the templates is aimed to mitigate the large lattice mismatch between ZnO and sapphire, and was grown by metal organic chemical vapor deposition. The grown a-plane ZnO films have been analyzed by various techniques such as high resolution X-ray diffraction, photoluminescence. It shows that high quality a-plane ZnO films have been achieved by our growth method.

Paper Details

Date Published: 20 February 2009
PDF: 5 pages
Proc. SPIE 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration, 72791L (20 February 2009); doi: 10.1117/12.823281
Show Author Affiliations
Cheng Liu, Huazhong Univ. of Science and Technology (China)
Jiangnan Dai, Huazhong Univ. of Science and Technology (China)
Zhihao Wu, Huazhong Univ. of Science and Technology (China)
Arizona State Univ. (United States)
Xiangyun Han, Huazhong Univ. of Science and Technology (China)
Qinghua He, Huazhong Univ. of Science and Technology (China)
Chenhui Yu, Huazhong Univ. of Science and Technology (China)
Lei Zhang, Huazhong Univ. of Science and Technology (China)
Yihua Gao, Huazhong Univ. of Science and Technology (China)
Changqing Chen, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 7279:
Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration
Liming Zhang; Michael J. O'Mahony, Editor(s)

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