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Proceedings Paper

High quality AlN films grown by pulsed atomic-layer epitaxy
Author(s): Hu Wang; Ruofei Xiang; Qiang Zhang; Jiangnan Dai; Qinghua He; Zhihao Wu; Changqing Chen
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Paper Abstract

In this paper, we report growth of AlN epilayers by pulsed atomic-layer epitaxy (PALE) method, by which the group III element sources and NH3 were alternatively transported into the reactor. We have systematically investigated the effects of growth conditions of PALE on the crystal quality of AlN epilayers. By optimizing the PALE growth conditions, the root mean square (rms) of AlN layers was 1.319 nm and the full width at half-maximum (FWHM) was 0.18 arcmin, room-temperature band edge absorbing peak at 198 nm was easily achieved, indicating the small mosaicity and low dislocation density of the films.

Paper Details

Date Published: 19 February 2009
PDF: 5 pages
Proc. SPIE 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration, 72791J (19 February 2009); doi: 10.1117/12.823268
Show Author Affiliations
Hu Wang, Huazhong Univ. of Science and Technology (China)
Ruofei Xiang, Huazhong Univ. of Science and Technology (China)
Qiang Zhang, Huazhong Univ. of Science and Technology (China)
Jiangnan Dai, Huazhong Univ. of Science and Technology (China)
Qinghua He, Huazhong Univ. of Science and Technology (China)
Zhihao Wu, Huazhong Univ. of Science and Technology (China)
Arizona State Univ. (United States)
Changqing Chen, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 7279:
Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration
Liming Zhang; Michael J. O'Mahony, Editor(s)

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