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Proceedings Paper

Effects of the Al composition in AlGaN buffer layer on a-plane GaN films grown on r-plane sapphire substrate by MOCVD
Author(s): Qiang Zhang; Z. H. Wu; Jiangnan Dai; Lei Zhang; Qinghua He; Yuqin Sun; Changqing Chen
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Paper Abstract

In this work, we have investigated the effect of Al composition in AlGaN low-temperature buffer layer (BL) on the crystal quality of a-pane GaN thin films grown on r-plane sapphire substrates. GaN films grown using AlGaN BL with 15% Al exhibit smoothest surface morphology, lowest value of full width at half maximum of X-ray rocking curve and least impurity incorporation, as compared to those films grown using GaN and AlN BLs. AlN BLs result in the worst crystal quality of GaN films due to the large lattice match between GaN and AlN BL, while GaN BLs lead to intermediary quality of GaN films due to large lattice match between GaN BL and r-sapphire substrate. Adding 15% AlN in to GaN BLs can significantly reduce the lattice mismatch between BL and r-sapphire substrate, while still keep the lattice mismatch between BL and GaN films relatively small, and thus optimizes the crystal quality of a-GaN films grown on r-sapphire substrates.

Paper Details

Date Published: 19 February 2009
PDF: 7 pages
Proc. SPIE 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration, 72791E (19 February 2009); doi: 10.1117/12.823248
Show Author Affiliations
Qiang Zhang, Huazhong Univ. of Science and Technology (China)
Z. H. Wu, Huazhong Univ. of Science and Technology (China)
Arizona State Univ. (United States)
Jiangnan Dai, Huazhong Univ. of Science and Technology (China)
Lei Zhang, Huazhong Univ. of Science and Technology (China)
Qinghua He, Huazhong Univ. of Science and Technology (China)
Yuqin Sun, Huazhong Univ. of Science and Technology (China)
Changqing Chen, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 7279:
Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration
Liming Zhang; Michael J. O'Mahony, Editor(s)

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