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Proceedings Paper

High quality a-plane GaN layers grown by pulsed atomic-layer epitaxy on r-plane sapphire substrates
Author(s): Jiangnan Dai; Zhihao Wu; Xiangyun Han; Qinghua He; Yuqing Sun; Chenhui Yu; Lei Zhang; Liangzhu Tong; Yihua Gao; Changqing Chen
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Paper Abstract

In this work, pulsed atomic-layer epitaxy (PALE) technique has been used to grow a-plane GaN films on r-plane sapphire substrates. During growth, the supply of N atoms was alternatively turned on and off while Ga atoms were continuously supplied with a constant flow rate. By optimizing the on/off periods of N source at 20/10 secs, pit-free GaN films have been obtained with significantly reduced full width at half maximum of X-ray rocking curve and brighter characteristic emission of stacking faults, as compared to the case using conventional metal-organic chemicalvapor deposition. The improved epitaxy quality and optical properties in PALE is due to the enhanced the Ga-adatom surface migration and improved the lateral-growth rate, which results in larger grain size and longer stacking faults.

Paper Details

Date Published: 19 February 2009
PDF: 6 pages
Proc. SPIE 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration, 72791B (19 February 2009); doi: 10.1117/12.823160
Show Author Affiliations
Jiangnan Dai, Huazhong Univ. of Science and Technology (China)
Zhihao Wu, Huazhong Univ. of Science and Technology (China)
Arizona State Univ. (United States)
Xiangyun Han, Huazhong Univ. of Science and Technology (China)
Qinghua He, Huazhong Univ. of Science and Technology (China)
Yuqing Sun, Huazhong Univ. of Science and Technology (China)
Chenhui Yu, Huazhong Univ. of Science and Technology (China)
Lei Zhang, Huazhong Univ. of Science and Technology (China)
Liangzhu Tong, Huazhong Univ. of Science and Technology (China)
Yihua Gao, Huazhong Univ. of Science and Technology (China)
Changqing Chen, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 7279:
Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration
Liming Zhang; Michael J. O'Mahony, Editor(s)

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