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Proceedings Paper

Study on polarization dependency of InAs quantum dot coupled InGaAsP quantum well SOA
Author(s): Yi Yu; Lirong Huang
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Paper Abstract

A theoretical study is presented to solve the semiconductor optical amplifier (SOA) polarization dependent problem. We take InAs quantum dot (QD) coupled with tensile-strained InyGa1-yAsP quantum well (QW) structure as SOA active region. A theoretical model which describes the carrier transport process in QD, QW and barrier is established and the carrier rate equations and optical propagation equations are achieved based on the above model. The performance of QD coupled QW SOA is simulated. Optical gain spectrums of transverse electronic (TE) mode and transverse magnetic (TM) mode are presented and the polarization power ratio between TE mode and TM mode as the function of injection current and input optical signal wavelength is also achieved. By optimal designing of the structural parameters of SOA and operation conditions, we can get polarization independent QD coupled QW SOA in certain ranges of input optical wavelength.

Paper Details

Date Published: 20 February 2009
PDF: 12 pages
Proc. SPIE 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration, 72791A (20 February 2009); doi: 10.1117/12.823159
Show Author Affiliations
Yi Yu, Huazhong Univ. of Science and Technology (China)
Lirong Huang, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 7279:
Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration

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