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Proceedings Paper

Effect of thin carbon layer insertion on the magnetic property and microstructure of CoCrPt/Ti hybrid recording media
Author(s): X. M. Cheng; X. S. Miao; X. F. Yang; Z. Li; G. Q. Lin; Z. Y. Li
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Paper Abstract

CoCrPt/Ti/C, CoCrPt/C/Ti and CoCrPt/C/CoCrPt/Ti thin film were prepared to study the effect of thin C layer insertion on the magnetic properties and microstructure of CoCrPt/Ti hybrid recording media. Surface roughness improvement and C atoms' diffusion to Ti underlayer contribute to optimized magnetic properties in CoCrPt/Ti/C films due to C seedlayer insertion. Very thin C intermediate layer gives rise to smaller magnetic grain size and improved perpendicular coercivity in annealed CoCrPt/C/Ti thin film while thicker C intermediate layer hinders the epitaxial growth relationship between Ti underlayer and Co-alloy magnetic layer. 3nm C intermediate layer in CoCrPt/C/CoCrPt/Ti thin film structure helps to obtain smaller grain size and weaker inter-granular exchange coupling interaction in the magnetic layer after annealing process. C atoms' diffusion into Ti underlayer, Co-alloy magnetic layer or grain boundary in magnetic layer plays an important role in the effect of thin C layer insertion on the magnetic property and microstructure of CoCrPt/Ti hybrid recording media.

Paper Details

Date Published: 19 March 2009
PDF: 6 pages
Proc. SPIE 7125, Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage, 71250S (19 March 2009); doi: 10.1117/12.822640
Show Author Affiliations
X. M. Cheng, Huazhong Univ. of Science and Technology (China)
X. S. Miao, Huazhong Univ. of Science and Technology (China)
X. F. Yang, Huazhong Univ. of Science and Technology (China)
Z. Li, Huazhong Univ. of Science and Technology
G. Q. Lin, Huazhong Univ. of Science and Technology (China)
Z. Y. Li, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 7125:
Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage
Fuxi Gan, Editor(s)

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